1960

First Planar Integrated Circuit
Jay Last of Fairchild Semiconductor led development of the first commercial IC based on Hoerni’s planar process and Noyce’s monolithic approach. The first working monolithic devices produced used physical isolation to achieve electrical separation between components. Deep channels were etched from the rear of the silicon wafer and filled with non-conducting epoxy.
1961

Silicon Exceeds Germanium Speed
Seymour Cray funded development of the first silicon device to meet the performance demands of the world's fastest machine. Fairchild Semiconductor met the specifications by combining "gold-doping" - the addition of gold impurities - together with the new epitaxial deposition process.
1963

Complimentary MOS Circuit
In a 1963 conference paper C. T. Sah and Frank Wanlass of the Fairchild R & D Laboratory showed that logic circuits combining p-channel and n-channel MOS transistors in a complementary symmetry circuit configuration drew close to zero power in standby mode. Wanlass patented the idea that today is called CMOS.
1967
Applied Materials is founded and becomes one of the earliest companies to make wafer fabrication equipment for semiconductor manufacturing.
1968

Intel Founded
Intel (originally incorporated as NM Electronics) is formed when Robert Noyce and Gordon Moore leave Fairchild Semiconductor to produce memory.
1969
Advanced Micro Devices is founded by ex-Fairchilder, Jerry Sanders.